Although 3D ICs are at the R&D stage in the largest semiconductor companies today, recent announcements of Samsung, Elpida, Oki, NEC and IBM in 2007 could speed up the 3D TSV technology adoption, especially in the wireless and memory businesses.

The new Yole 3D IC report gives you access to a complete technology and market analysis on the latest 3D packaging solutions.

3D integration will affect the IC, MEMS and image sensors markets

Semiconductor ICs face constant pressure for increased performances while still decreasing their size. At the same time, their packages must be able to accommodate to new functionalities. Because wire bonding will soon reach its limits in terms of density and performance, 3D stacking with micro-vias (or TSV, 'Through-Si vias') seems to be unavoidable in the future.

Regarding cost, Samsung predicts that 3D technologies will break Moore's law on the Flash memory market past 64 Gbit die capacities.

Moreover, 3D integration will also be the key driver to integrate heterogeneous technologies together.

In the 3D IC report, Yole Développement has analyzed how  handset, wireless and computing applications will be a strong market driver for 3D ICs integration.

Stacking memories (NAND Flash, DRAMs), stacking memories on logic, FPGAs, MEMS, CMOS image sensors, Power amplifiers and RF integrated passives will be the first mass market applications.

For all applications considered, Yole’s experts estimate that the number of 3D IC processed wafers could reach ~ 10 Millions of units above 2012.

3D-ICs: the technical challenges are close to being overcome

3D IC is the most 'integrated' packaging approach. However, strong technical challenges need to be overcome such as chip thermal management, reliable co-design & simulation tools, industrial wafer-to-wafer bonding tools, low-cost through-wafer via structures and via filling processes. Regularly updated, the 3D IC report of Yole analyzes in depth the pros and cons of the different technical solutions as well as the cost structure for implementing TSVs according to the technical choice adopted.

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